An article in the Journal of the Electrochemical Society (Vol. 139, No. 2, 1992, pp. 524532) describes an experiment to investigate the low-pressure vapor deposition of polysilicon. The experiment was carried out in a large-capacity reactor at Sematech in Austin, Texas. The reactor has several wafer positions, and four of these positions are selected at random. The response variable is film thickness uniformity. Three replicates of the experiment were run, and the data are as follows:
(a) Is there a difference in the wafer positions? Use a = 0.05.
(b) Estimate the variability due to wafer positions.
(c) Estimate the random error component.
(d) Analyze the residuals from this experiment and comment on model adequacy.
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