(a). A silicon wafer is uniformly doped p-type with Na = 10^15 cm -3 . At T = 0K. What are the equilibrium hole and electron consentrations?
(b). A semiconductor is doped with an impurity concentration N such that N>>ni and all the impurities are ionized. Also n-N and p = ni^2/N. Is the impurity a donor or acceptor? Explain
(c). The electron concentration in peace of Si at T = 300K under equilibrium conditions is 10^5 cm-3. What is the hole concentration?
(d). For a silicon sample at T = 300K, the Fermi level is located 0.259 eV above the intrinsic Fermi level. What are hole and electron concentrations?
