A 180 nm NMOS transistor has a gate oxide thickness of 40Å.
(a) What is its gate capacitance per micron of width?
(b) If its threshold voltage is 0.55V and the mobility of electrons in this process is 400 cm 2 /Vs, calculate the value of β for a transistor width of 2.5μm.
(c) Determine the saturation voltage and saturation current for V gs = 1.0V and V gs = 2.0V.
(d) Sketch the I ds vs. V ds curves for this transistor in the range 0 < V ds < 2.0V for V gs = 0.5V, 1.0V and 2.0V.
